Vishay SiliconixUnited States
MOSFET P-CH 8V 5.4A SOT23-3
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Technical parameters
Key specs
ChannelP-channel
Drain-source voltage8 V
Continuous drain current5.4 A
On-resistance40 mΩMax · 4.1A
Gate threshold voltage800 mVMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Drain to Source Voltage (Vdss) | 8 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Other | |
| Base Product Number | SI2305 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 4 V |
| Mfr | Vishay Siliconix |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.1A, 4.5V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
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