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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current5 A
On-resistance26 mΩMax · 5A
Gate threshold voltage850 mVMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)750mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
MfrUMW
Product StatusActive
Rds On (Max) @ Id, Vgs26mOhm @ 5A, 4.5V
SeriesUMW
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id850mV @ 250µA

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