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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage20 V
Continuous drain current6.8 A
On-resistance21 mΩMax · 4.5A
Gate threshold voltage900 mVMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C6.8A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Power Dissipation (Max)1.25W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
Other
Base Product NumberSI2312
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 8 V
MfrMicro Commercial Co
Product StatusActive
Rds On (Max) @ Id, Vgs21mOhm @ 4.5A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id900mV @ 250µA

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