VBsemi(微碧半导体)China
SI2333-TP-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；SOT23-3；P—Channel沟道；-20V；-3.5A；RDS(ON)=71(mΩ)@VGS=10V；VGS=±12V；Vth=-0.8V；采用Trench技术；
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View full reportTechnical parameters
Key specs
Drain-source voltage20 V
Continuous drain current3.5 A
On-resistance90 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 3.5A |
| Other | |
| 导通电阻(RDS(on)) | 90mΩ@4.5V |
| 耗散功率(Pd) | 3W |