BORN(伯恩半导体)China
MOSFET,P-channel 12V/8V 5.1A VGS(th)=0.6V 28mΩ@5.1A&4.5V,SOT-23
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Key specs
ChannelP-channel
Drain-source voltage12 V
Continuous drain current5.1 A
On-resistance59 mΩMax · 1.8V
| Power | |
|---|---|
| 漏源电压(Vdss) | 12V |
| 连续漏极电流(Id) | 5.1A |
| Other | |
| 导通电阻(RDS(on)) | 59mΩ@1.8V |
| 数量 | 1个P沟道 |