VishayUnited States
SI2333DDS-T1-BE3
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage12 V
On-resistance28 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 12V |
| Other | |
| 导通电阻(RDS(on)) | 28mΩ@4.5V,5A |
| 数量 | 1个P沟道 |
| 耗散功率(Pd) | 1.7W；1.2W |