VishayUnited States
SI2333DS-T1-E3
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage12 V
Continuous drain current4.1 A
| Power | |
|---|---|
| 漏源电压(Vdss) | 12V |
| 连续漏极电流(Id) | 4.1A |
| Other | |
| 数量 | 1个P沟道 |
| 耗散功率(Pd) | 750mW |