VishayUnited States
SI2333DS-T1-GE3
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage12 V
Continuous drain current5.3 A
On-resistance32 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 12V |
| 连续漏极电流(Id) | 5.3A |
| Other | |
| 导通电阻(RDS(on)) | 32mΩ@4.5V,5.3A |
| 数量 | 1个P沟道 |