N-Channel MOSFET

SI3458DV-T1

Transistors - FETs, MOSFETs - SingleTSOP-6

IC MOSFET N-CH 60V 3.2A 6-PIN TSOP T/R

N-channel 60V TrenchFET power MOSFET in TSOP-6 package, 3.2A continuous drain current, 0.10Ω on-resistance @10V, -55 to 150°C operating temperature, RoHS compliant.Checked against the datasheet

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Technical parameters

Key specs

ChannelN-channel

Drain-source voltage60 V

Continuous drain current2.5 ~ 3.2 A3.2 A (TA=25°C)，2.5 A (TA=70°C)

On-resistance100 mΩMax · Max 0.10 Ω (VGS=10 V，ID=3.2 A)，Max 0.13 Ω (VGS=4.5 V，ID=2.8 A)

Gate threshold voltage1 VMin · Min 1 V (VDS=VGS，ID=250 μA)

Datasheet-verified parameters

19 items

Parameter	Value and test conditions	Source
Channel	N-Channel
Drain-Source Voltage	60 V
Continuous Drain Current	3.2 A (TA=25°C), 2.5 A (TA=70°C)
Drain-Source On-State Resistance	Typ 0.085 Ω, Max 0.10 Ω (VGS=10 V, ID=3.2 A); Typ 0.110 Ω, Max 0.13 Ω (VGS=4.5 V, ID=2.8 A)
Gate Threshold Voltage	Min 1 V (VDS=VGS, ID=250 μA)
Package	TSOP-6
Operating Junction and Storage Temperature Range	-55 to 150 °C
RoHS Compliance	Lead (Pb)-Free Version is RoHS Compliant
Gate-Source Voltage	±20 V
Pulsed Drain Current	15 A
Maximum Power Dissipation	2 W (TA=25°C), 1.3 W (TA=70°C)
Gate-Body Leakage	Max ±100 nA (VDS=0 V, VGS=±20 V)
Zero Gate Voltage Drain Current	Max 1 μA (VDS=48 V, VGS=0 V); Max 50 μA (VDS=48 V, VGS=0 V, TJ=150°C)
Forward Transconductance	Typ 8 S (VDS=4.5 V, ID=3.2 A)
Total Gate Charge	Typ 8 nC, Max 16 nC (VDS=30 V, VGS=10 V, ID=3.2 A)
Gate Resistance	Typ 1 Ω, Max 3.9 Ω
Maximum Junction-to-Ambient Thermal Resistance	Max 62.5 °C/W (t ≤ 5 sec); Typ 106 °C/W (Steady State)
Maximum Junction-to-Lead Thermal Resistance	Typ 35 °C/W (Steady State)
Diode Forward Voltage	Max 1.2 V (IS=1.7 A, VGS=0 V)

All parameters (7)ExpandCollapse

Power
Continuous Drain Current (TJ =150°C) TA =25°C	3.2 A
Drain-Source Voltage	60 V
Gate-Source Voltage	±20 V
Maximum Power Dissipation TA =25°C	2 W
Environment and package
Operating Junction and Storage Temperature Range	-55 to 150 °C
Package	TSOP-6
Other
Drain-Source On-State Resistance (VGS=10 V, ID=3.2 A)	0.10 Ω (Max)

Pinout and package

Pin	Name	Function	Source
1		Drain
2		Drain
3		Gate
4		Source
5		Drain
6		Drain

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DatasheetDatasheet · 93.8 KB · 2026-10-29

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