Vishay SiliconixUnited States
MOSFET N-CHANNEL 30V 16A 8SO
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current16 A
On-resistance9.5 mΩMax · 10A
Gate threshold voltage2.3 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 5W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Other | |
| Base Product Number | SI4774 |
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1025 pF @ 15 V |
| Mfr | Vishay Siliconix |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 10V |
| Series | SkyFET®, TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
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