VBsemi(微碧半导体)China
SI7309DN-T1-GE3-VB
Transistors - FETs, MOSFETs - SingleDFN8(3X3)；P—Channel沟道,-60V；-36A；RDS(ON)=210mΩ@VGS=10V,VGS=±20V；Vth=-1~-2.5V；
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current36 A
On-resistance28.8 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 36A |
| Other | |
| 导通电阻(RDS(on)) | 28.8mΩ@4.5V |
| 耗散功率(Pd) | 22W |