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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current42.8 ~ 100 A
On-resistance1.7 mΩMax · 20A
Gate threshold voltage3.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 42.8A (Ta), 100A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Supplier Device Package | PowerPAK® SO-8DC |
| Other | |
| Base Product Number | SIDR626 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5130 pF @ 30 V |
| Mfr | Vishay Siliconix |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Part Status | Active |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 20A, 10V |
| Series | TrenchFET® Gen IV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |