VishayUnited States
SIDR626DP-T1-GE3
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current42.8 ~ 100 A
On-resistance1.7 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 100A；42.8A |
| Other | |
| 导通电阻(RDS(on)) | 1.7mΩ@10V,20A |
| 数量 | 1个N沟道 |