VishayUnited States
SIHG44N65EF-GE3
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current29 A
| Power | |
|---|---|
| 漏源电压(Vdss) | 650V |
| 连续漏极电流(Id) | 29A |
| Other | |
| 数量 | 1个N沟道 |
| 耗散功率(Pd) | 417W |