VishayUnited States
SIR632DP-T1-RE3
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage150 V
Continuous drain current29 A
On-resistance34.5 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 150V |
| 连续漏极电流(Id) | 29A |
| Other | |
| 导通电阻(RDS(on)) | 34.5mΩ@10V,10A |
| 数量 | 1个N沟道 |