Vishay SiliconixUnited States
MOSFET N-CH 150V 29A PPAK SO-8
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage150 V
Continuous drain current29 A
On-resistance34.5 mΩMax · 10A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Power Dissipation (Max) | 69.5W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | PowerPAK® SO-8 |
| Supplier Device Package | PowerPAK® SO-8 |
| Other | |
| Base Product Number | SIR632 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 7.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 75 V |
| Mfr | Vishay Siliconix |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 34.5mOhm @ 10A, 10V |
| Series | ThunderFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |