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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current100 A
On-resistance880 µΩMax · 20A
Gate threshold voltage2.3 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 104W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SO-8 |
| Supplier Device Package | PowerPAK® SO-8 |
| Other | |
| Base Product Number | SIR638 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 204 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 20 V |
| Mfr | Vishay Siliconix |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 20A, 10V |
| Series | TrenchFET® Gen IV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +20V, -16V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |