All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current38.3 A
On-resistance7.5 mΩMax · 10A
Gate threshold voltage2.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 38.3A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3.2W (Ta), 19.8W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® 1212-8 |
| Supplier Device Package | PowerPAK® 1212-8 |
| Other | |
| Base Product Number | SIS322 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 15 V |
| Mfr | Vishay Siliconix |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Part Status | Active |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 10A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +20V, -16V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Documents
No documents are linked to this part yet.