VishayUnited States
SIS932EDN-T1-GE3
Transistors - FETs, MOSFETs - SingleAll alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current6 A
On-resistance22 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 6A |
| Other | |
| 导通电阻(RDS(on)) | 22mΩ@4.5V,10A |
| 数量 | 2个N沟道 |