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Technical parameters

Power
IC-最大集电极电流10A
VCBO-CB结击穿电压120V
VEBO-EB结击穿电压5V
AC and DC characteristics
fT-变换频率NMHZ
Hfe-最小直流增益55
Environment and package
封装类型1TO3P
Other
Pd-最大功率耗散80W
VCE(sat)-CE结饱和压降2V
引脚数量13

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