MOSFET N-CH 250V 20A TO263-3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage250 V
Continuous drain current20 A
On-resistance95 mΩMax · 10A
Gate threshold voltage4.5 VMax · 1mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 40W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 |
| Other | |
| Base Product Number | SKP253 |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
| Mfr | Sanken Electric USA Inc. |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 10A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
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