VBsemi(微碧半导体)China
SM2004NSD-VB
Transistors - FETs, MOSFETs - SingleSOT89-3；N—Channel沟道,30V；6.8A；RDS(ON)=22mΩ@VGS=4.5V,VGS=20V；Vth=0.6~1.5V；
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View full reportTechnical parameters
Key specs
Drain-source voltage30 V
Continuous drain current6.8 A
On-resistance30 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 6.8A |
| Other | |
| 导通电阻(RDS(on)) | 30mΩ@2.5V |
| 耗散功率(Pd) | 6.3W |