ANBON SEMICONDUCTOR (INT'L) LIMITEDTaiwan, China
单向型，P_PPM=6600W (10/1000μs)，V_RWM=22V，V_BR=24.4-26.9V，IT=5.0mA，防 ESD/浪涌/雷击，玻璃钝化芯片，低漏电流，优异钳位电压 (VC)，适用于低压电路电过应力保护
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View full reportTechnical parameters
Key specs
Reverse standoff voltage22 V
Clamping voltage35.5 VMax
Peak pulse power6.6 kW10/1000us
| Power | |
|---|---|
| 反向截止电压(Vrwm) | 22V |
| 峰值脉冲电流(Ipp) | 186A@10/1000us |
| 钳位电压 | 35.5V |
| Other | |
| 峰值脉冲功率(Ppp) | 6.6kW@10/1000us |