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Technical parameters
| Power | |
|---|---|
| IR-最大反向漏电流 | NμA |
| VBR(min)-最小反向击穿电压 | 4V |
| Vc最大钳位电压 | 7V |
| VRWM-反向工作峰值电压 | 3.3V |
| Environment and package | |
| 封装类型1 | SOIC |
| Other | |
| Ppk最大峰值脉冲功率 | 300W |
| 引脚数量1 | 8 |
1 alternatives on file. Sign in to view them.
| Power | |
|---|---|
| IR-最大反向漏电流 | NμA |
| VBR(min)-最小反向击穿电压 | 4V |
| Vc最大钳位电压 | 7V |
| VRWM-反向工作峰值电压 | 3.3V |
| Environment and package | |
| 封装类型1 | SOIC |
| Other | |
| Ppk最大峰值脉冲功率 | 300W |
| 引脚数量1 | 8 |