Zhengxin(正芯)China
采用GPP工艺芯片，具有低漏电、高对档率等优势 ，有较好的高温特性及稳定性。
All alternatives
View full reportTechnical parameters
Key specs
Reverse standoff voltage8.5 V
Clamping voltage14.4 VMax
Peak pulse power200 W
| Power | |
|---|---|
| 反向截止电压(Vrwm) | 8.5V |
| 峰值脉冲电流(Ipp) | 13.89A |
| 钳位电压 | 14.4V |
| Other | |
| 峰值脉冲功率(Ppp) | 200W |
Documents
No documents are linked to this part yet.