Infineon TechnologiesGermany
MOSFET N-CH 650V 800MA TO251-3
All alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current800 mA
On-resistance6 ΩMax · 500mA
Gate threshold voltage3.9 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 11W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Supplier Device Package | PG-TO251-3-11 |
| Other | |
| Base Product Number | SPS01N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |