MOSFET 2N-CH 60V 0.17A US6
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 170mA |
| Drain to Source Voltage (Vdss) | 60V |
| Power - Max | 285mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
| Other | |
| Base Product Number | SSM6N7002 |
| FET Feature | Standard |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 17pF @ 10V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3.9Ohm @ 100mA, 10V |
| Series | - |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
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