VBsemi(微碧半导体)China
STD26NF10T4-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；是一款单路N型场效应晶体管，采用Trench工艺，适用于汽车电子模块、工业控制模块等领域。TO252；N—Channel沟道,100V；40A；RDS(ON)=30mΩ@VGS=10V,VGS=±20V；Vth=1~3V；
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current40 A
On-resistance30 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 100V |
| 连续漏极电流(Id) | 40A |
| Other | |
| 导通电阻(RDS(on)) | 30mΩ@10V,40A |
| 数量 | 1个N沟道 |