STD30NF06LT4

MOSFET N-CH 60V 35A DPAK

All alternatives

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ChannelN-channel

Drain-source voltage60 V

Continuous drain current35 A

On-resistance28 mΩMax · 18A

Gate threshold voltage2.5 VMax · 250μA

Power
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Power Dissipation (Max)	70W (Tc)
Environment and package
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Other
Base Product Number	STD30
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 25 V
Mfr	STMicroelectronics
Product Status	Active
Rds On (Max) @ Id, Vgs	28mOhm @ 18A, 10V
Series	STripFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA