STL58N3LLH5
STMicroelectronicsSwitzerland

STL58N3LLH5

ActiveTransistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 64A POWERFLAT

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current64 A
On-resistance9 mΩMax · 7.5A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)4.8W (Ta), 62.5W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (5x6)
Other
Base Product NumberSTL58
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs9mOhm @ 7.5A, 10V
SeriesAutomotive, AEC-Q101, STripFET™ H5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+22V, -20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Documents

DatasheetDatasheet · 705.3 KB · 2026-09-21DatasheetDatasheet · 705.3 KB · 2026-09-21Application NoteApplication Note · 4.8 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 912.4 KB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22Application NoteApplication Note · 139.2 KB · 2026-09-22
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