STMicroelectronicsSwitzerland

STL8DN10LF3

ActiveTransistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 100V 20A 5X6

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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C20A
Drain to Source Voltage (Vdss)100V
Power - Max70W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (5x6)
Other
Base Product NumberSTL8
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds970pF @ 25V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs35mOhm @ 4A, 10V
SeriesAutomotive, AEC-Q101, STripFET™ III
Vgs(th) (Max) @ Id3V @ 250µA

Documents

DatasheetDatasheet · 1021.1 KB · 2026-09-21DatasheetDatasheet · 1021.1 KB · 2026-09-21Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.2 MB · 2026-09-22MarketingMarketing · 1.2 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 912.4 KB · 2026-09-22Application NoteApplication Note · 776.6 KB · 2026-09-22MarketingMarketing · 764.7 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22MarketingMarketing · 743.7 KB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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