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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C10A
Drain to Source Voltage (Vdss)30V
Power - Max2.5W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberSTS10
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 25V
MfrSTMicroelectronics
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs21mOhm @ 5A, 10V
SeriesSTripFET™ V
Vgs(th) (Max) @ Id1V @ 250µA

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