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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C3A
Drain to Source Voltage (Vdss)60V
Power - Max2W
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberSTS3D
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds815pF @ 25V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs80mOhm @ 1.5A, 10V
SeriesSTripFET™
Vgs(th) (Max) @ Id1V @ 250µA

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