JSMSEMI(杰盛微)China
STS7C4F30L-JSM
Transistors - FETs, MOSFETs - Single便携式设备，使用高电池密度，先进的沟槽技术，适合于低压应用以及低在线功率损耗
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View full reportTechnical parameters
Key specs
ChannelN + P
Drain-source voltage40 V
Continuous drain current8 A
On-resistance40 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 40V |
| 连续漏极电流(Id) | 8A |
| Other | |
| 导通电阻(RDS(on)) | 40mΩ@4.5V |
| 数量 | 1个N沟道+1个P沟道 |
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