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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current140 A
On-resistance11 mΩMax · 70A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)450W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~175°C(TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageMAX247™
Other
Base Product NumberSTY140
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs600 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12600 pF @ 25 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs11mOhm @ 70A, 10V
SeriesMESH OVERLAY™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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