Vishay SiliconixUnited States
MOSFET N-CH 40V 25A TO252
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current25 A
On-resistance25 mΩMax · 25A
Gate threshold voltage3 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3W (Ta), 33W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
| Other | |
| Base Product Number | SUD25 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
| Mfr | Vishay Siliconix |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
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