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Technical parameters

Power
ID-最大漏极电流24A
VDSS-最大漏源电压500V
Vgs(th)-门槛电压4V
AC and DC characteristics
RDS(on)-漏源导通阻抗200mΩ
Environment and package
封装类型1TO3P
Other
Ciss-输入等效电容5990pF
Pd-功率耗散290W
Qg-栅极电荷90nC
内置ESD保护二极管0
内置整流二极管0
引脚数量13

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