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View full reportTechnical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 10A |
| Id-额定电流 | 10A |
| VDSS-最大漏源电压 | 650V |
| AC and DC characteristics | |
| RDS(on)-漏源导通阻抗 | 360mΩ |
| Ron-最大导通阻抗 | 360mΩ |
| Environment and package | |
| 封装类型1 | TO252 |
| 封装类型2 | TO251 |
| 封装类型3 | TO262 |
| Other | |
| Qg-栅极电荷 | 29nC |
| Vdss-漏源耐压 | 650V |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 应用场合1 | 充电器 |
| 应用案例1 | (iClever)QC4+快充 |
| 引脚数量1 | 3 |
| 引脚数量2 | 3 |
| 引脚数量3 | 3 |
| 集成ESD保护二极管 | 0 |
| 集成整流二极管 | 0 |
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