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View full reportTechnical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 11A |
| VDSS-最大漏源电压 | 800V |
| Environment and package | |
| 封装类型1 | TO252 |
| 封装类型2 | TO220 |
| Other | |
| Qg-栅极电荷 | 21nC |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 引脚数量1 | 3 |
| 引脚数量2 | 3 |
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| Power | |
|---|---|
| ID-最大漏极电流 | 11A |
| VDSS-最大漏源电压 | 800V |
| Environment and package | |
| 封装类型1 | TO252 |
| 封装类型2 | TO220 |
| Other | |
| Qg-栅极电荷 | 21nC |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 引脚数量1 | 3 |
| 引脚数量2 | 3 |
No documents are linked to this part yet.