TBD62003AFWG(Z,EHZ
Transistors - FETs, MOSFETs - Single7路驱动器，新产品，用场效应管作输出管，管压降更低，芯片发热更少，驱动性能更佳，
All alternatives
View full reportTechnical parameters
Key specs
Drain-source voltage50 V
Continuous drain current500 mA
On-resistance3.25 ΩMax · 5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 50V |
| 连续漏极电流(Id) | 500mA |
| Other | |
| 导通电阻(RDS(on)) | 3.25Ω@5V,350mA |
| 耗散功率(Pd) | 1.25W |