TF(拓锋)China
SGTMOS低内阻、低结电容、开关损耗小的N沟道增强型功率MOSFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current5 A
On-resistance90 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 100V |
| 连续漏极电流(Id) | 5A |
| Other | |
| 导通电阻(RDS(on)) | 90mΩ@10V |
| 数量 | 1个N沟道 |