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Technical parameters

Power
IC-最大集电极电流10A
VCBO-CB结击穿电压45V
VCBO-集基级击穿电压45V
VCEO-CE结击穿电压35V
VCEO-集射级击穿电压35V
AC and DC characteristics
fT-变换频率NMHZ
hFE-最小直流增益1000
Hfe-最小直流增益1000
Environment and package
封装类型1TO-220AB
Other
VCE(sat)-CE结饱和压降2V
VCE(sat)-集射级饱和压降2V
引脚数量13

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