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Technical parameters

Key specs

TypePNP
Collector-emitter voltage100 V
Collector current10 AMax
DC current gain10005A
Power125 WMax
Power
Current - Collector Cutoff (Max)2mA
Current - Collector (Ic) (Max)10 A
Power - Max125 W
Voltage - Collector Emitter Breakdown (Max)100 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 4V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-3PF
Other
Base Product NumberTIP147
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 10A

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