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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage60 V
Collector current6 AMax
DC current gain30300mA
Power65 WMax
Power
Current - Collector Cutoff (Max)700µA
Current - Collector (Ic) (Max)6 A
Power - Max65 W
Voltage - Collector Emitter Breakdown (Max)60 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 4V
Frequency - Transition3MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~150°C(TJ)
PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberTIP41
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A

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