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HomeTransistors - FETs, MOSFETs - SingleToshiba Semiconductor and StorageTK11A65W
TK11A65W
Toshiba Semiconductor and StorageJapan

TK11A65W

Transistors - FETs, MOSFETs - Single
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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage650 V
Continuous drain current11.1 A
On-resistance330 mΩMax · 10V
Power
漏源电压(Vdss)650V
连续漏极电流(Id)11.1A
Other
导通电阻(RDS(on))330mΩ@10V,5.5A
数量1个N沟道

Documents

DatasheetDatasheet · 326.2 KB · 2026-09-21DatasheetDatasheet · 236.7 KB · 2026-09-21Application NoteApplication Note · 3.5 MB · 2026-09-22Application NoteApplication Note · 2.3 MB · 2026-09-22Application NoteApplication Note · 2.1 MB · 2026-09-22Application NoteApplication Note · 1.6 MB · 2026-09-22Application NoteApplication Note · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.3 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 575.0 KB · 2026-09-22
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