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Technical parameters

Power
Input bias current (max) (pA)120
Input common mode headroom (to negative supply) (typ) (V)1.5
Input common mode headroom (to positive supply) (typ) (V)0
Iq per channel (typ) (mA)0.9375
Number of channels2
Output swing headroom (to negative supply) (typ) (V)0.105
Output swing headroom (to positive supply) (typ) (V)0.115
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)4.5
AC and DC characteristics
CMRR (typ) (dB)105
Offset drift (typ) (µV/°C)2
Slew rate (typ) (V/µs)20
Vos (offset voltage at 25°C) (max) (mV)4
Environment and package
Operating temperature range (°C)-40 to 125
Other
ArchitectureCMOS
FeaturesCost Optimized, EMI Hardened, Standard Amps
GBW (typ) (MHz)5.25
Iout (typ) (A)0.026
Rail-to-railIn to V+
RatingCatalog
Vn at 1 kHz (typ) (nV√Hz)37

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