All alternatives

View full report

3 alternatives on file. Sign in to view them.

Technical parameters

Key specs

Channels1
Isolation voltage5 kV
Output typeTransistor
Current transfer ratio50 ~ 600 %Max 600% (IF = 5mA,VCE = 5V)

Datasheet-verified parameters

21 items
ParameterValue and test conditionsSource
Channels1
AC Isolation Voltage5000V RMS
Output TypeNPN silicon photo transistor
Current Transfer RatioMin 50%, Max 600% (IF = 5mA, VCE = 5V)
PackageDual In Line Plastic Package (DIP4)
Operating Temperature-55°C to +110°C
RoHSCompliant
Input Forward CurrentMax 50mA
Peak Forward CurrentMax 1A (100μs, 100Hz)
Reverse VoltageMax 6V
Power dissipationMax 70mW
Junction TemperatureMax 125°C
Forward VoltageTyp 1.2V, Max 1.4V (IF = 20mA)
Reverse LeakageMax 10μA (VR = 4V)
Terminal CapacitanceTyp 30pF, Max 250pF (V = 0V, f = 1KHz)
Collector-Emitter Saturation VoltageTyp 0.1V, Max 0.2V (IF = 20mA, IC = 1mA)
Floating CapacitanceTyp 0.6pF, Max 1pF (V = 0V, f = 1MHz)
Cut-Off FrequencyTyp 80kHz (VCE = 5V, IC = 2mA, RL = 100Ω, -3dB)
Output Rise TimeTyp 4μs, Max 18μs (VCC = 5V, IC = 2mA, RL = 100Ω)
Output Fall TimeTyp 3μs, Max 18μs (VCC = 5V, IC = 2mA, RL = 100Ω)
CertificationUL File E91231, VDE Approval Certificate No. 40028086

Pinout and package

TLP521
TLP521
Package: Dual In Line Plastic Package (DIP4)
PinNameFunctionSource
1Anode
2Cathode
3Emitter
4Collector

Documents

Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.