TransphormUnited States
650 V 34 A GAN FET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current34 A
On-resistance60 mΩMax · 22A
Gate threshold voltage4.8 VMax · 700μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 119W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 |
| Other | |
| Base Product Number | TP65H050 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Mfr | Transphorm |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Series | SuperGaN® |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |