TransphormUnited States
GANFET N-CH 650V 6.5A 3PQFN
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current6.5 A
On-resistance312 mΩMax · 5A
Gate threshold voltage2.6 VMax · 500μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Power Dissipation (Max) | 21W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Cut Tape (CT) Digi-Reel® Tube |
| Package / Case | 3-PowerDFN |
| Supplier Device Package | 3-PQFN (8x8) |
| Other | |
| Base Product Number | TP65H300 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
| Mfr | Transphorm |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 312mOhm @ 5A, 8V |
| Series | - |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
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