650V 240mΩ SuperGaN GaN FET in PQFN88
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Pkg. Dimensions (mm) | 8 x 8 |
| Qualification Level | Standard |
| Temp. Range (°C) | -55 to +150°C |
| Other | |
| Blocking Capability | Uni-Directional Switch |
| Carrier Type | Tape & Reel |
| Ciss (Typical) (pF) | 1225 |
| Coss (Typical) (pF) | 16.7 |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 8 |
| Pkg. Type | PQFN88 |
| Price (USD) | $1.02526 |
| Qg typ (nC) | 12.7 |
| Qoss (nC) | 19 |
| RDSON (max) (mΩ) | 312 |
| RDSON (Typ) (mΩ) | 240 |
| Ron * Qoss (FOM) | 4560 |
| trr (Typical) (nS) | 29 |
| Vds min (V) | 650 |
| Vth typ (V) | 1.6 |
| V(TR)DSS max (V) | 800 |